Molecular dynamics simulation analyses of the mechanisms of SiN etching by simultaneous incidence of hydrogen radicals and hydrocarbon ions (CH<sub>x</sub><sup>+</sup>)

Yuichi Murakami

11:30 AM - 11:45 AM

△ [15a-2Q-10] Molecular dynamics simulation analyses of the mechanisms of SiN etching by simultaneous incidence of hydrogen radicals and hydrocarbon ions (CH_x⁺)

〇Yuichi Murakami¹, Michiro Isobe¹, Keita Miyake¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Sony)

Keywords:SiN,Molecular Dynamics,HFC plasma

Selective etching of silicon nitride (SiN) over silicon dioxide (SiO₂) using fluorocarbon (FC) gas with hydrogen (H₂) and/or hydrofluorocarbon (HFC) gas. we study the behavior of hydrogen in the plasma gas by molecular dynamics (MD) simulations

Presentation information

[15a-2Q-1~12] 8.4 Plasma etching

△ [15a-2Q-10] Molecular dynamics simulation analyses of the mechanisms of SiN etching by simultaneous incidence of hydrogen radicals and hydrocarbon ions (CH_x⁺)

Presentation information

[15a-2Q-1~12] 8.4 Plasma etching

△ [15a-2Q-10] Molecular dynamics simulation analyses of the mechanisms of SiN etching by simultaneous incidence of hydrogen radicals and hydrocarbon ions (CHx+)

△ [15a-2Q-10] Molecular dynamics simulation analyses of the mechanisms of SiN etching by simultaneous incidence of hydrogen radicals and hydrocarbon ions (CH_x⁺)