[15a-2Q-1~12] 8.4 Plasma etching

[15a-2Q-11] Mechanism of transition metal etching process using neutral beam oxidation and complex reaction (3)

〇Tomohiro Kubota¹, Yoshiyuki Kikuchi², Toshihisa Nozawa², Hiroshi Ito³, Momoji Kubo³, Seiji Samukawa^1,4 (1.IFS, Tohoku Univ., 2.Tokyo Electron Ltd., 3.IMR, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

Keywords:transition metal,Magnetoresistive RAM,etching process

Anisotropic etching of transition metals (especially magnetic materials) is important for realization of MRAM. Recently Gu and Samukawa reported a damage-free anisotropic etching of transition metals using neutral beam and transition metal complex. The etching mechanism was investigated based on first-principles calculation.