[15a-2S-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

[15a-2S-10] Measurement of a carrier distribution change by light irradiation in a single crystalline silicon solar cell using super-higher-order scanning nonlinear dielectric microscopy

〇Kotaro Hirose¹, Norimichi Chinone¹, Yasuo Cho¹ (1.RIEC, Tohoku Univ.)

Keywords:semicionductor,carrier distribution,photovoltage

The local capacitance-voltage(C-V) characterization in pn junction of a single crystalline solar cell was measured by super-higher-order scanning nonlinear dielectric microscopy. The p-type, n-type and depletion regions were distinguished by the shape of C-V curve. The comparison between the results of the open circuit sample with light on and off indicates that the electron increased at p region near the n region.