[15a-PB4-1~9] 13.4 Siプロセス・配線・MEMS・集積化技術

▼ [15a-PB4-8] Electrical Properties of Pulsed-Laser Crystallized Poly-Si Thin Films Grown on YSZ Crystallization-Induction Layers by Two-Step Irradiation Method

〇Lien Mai¹, Susumu Horita¹ (1.JAIST)

キーワード：poly-Si,pulsed laser,Hall effect

Conductivities of pulsed-laser-crystallized Si thin films with/without YSZ layers by the two-step method were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized on the YSZ layer is more suitable for application of electronic devices, compared with the Si film on glass.