[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[15p-1A-1] [Young Scientist Presentation Award Speech] Impact Ionization Coefficients in SiC Toward Ultrahigh-Voltage Power Devices

〇Hiroki Niwa¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC,impact ionization coefficient,critical electric field strength

Impact ionization coefficients are important material properties which determine the breakdown voltage of power devices. In SiC, however, reported values show large variation, leading to difficulty in accurate device simulation. In this study, by using SiC photodiodes with various multiplication layer structures, ionization coefficients were accurately measured in a wide range of electric field.