The 76th JSAP Autumn Meeting, 2015

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 15, 2015 1:30 PM - 5:30 PM 1A (131+132)

座長:黒木 伸一郎(広島大),升本 恵子(産総研)

4:15 PM - 4:30 PM

[15p-1A-10] Observation of basal plane dislocation in 4H-SiC wafer by mirror projection electron microscopy and low-energy SEM

〇Toshiyuki Isshiki1, Yoshihisa Orai2, Takahiro Sato2 (1.Kyoto Inst. Tech., 2.Hitachi High-Tech.)

Keywords:Mirror Projection Electron Microscopy,defect inspection,BPD