Electrical Characteristics of SiC Schottky Diode with Laminated Mo/C Electrode

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 15, 2015 1:30 PM - 5:30 PM 1A (131+132)

座長:黒木伸一郎(広島大),升本恵子(産総研)

2:15 PM - 2:30 PM

〇(M1)Tomoyuki Suzuki¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Tech. IGSSE)

Keywords:Silicon Carbide,Molybdenum Carbide,Schottky Diode