[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[15p-1A-9] Noncontact and nondestructive measurement of electrical properties for SiC film using THz ellipsometry

〇Takashi Fujii^1,2, Iwamoto Toshiyuki¹, Sato Yukinori¹, Tachi Kohei², Araki Tsutomu², Nanishi Yasushi², Sugie Ryuichi³, Morita Noayoshi³, Nagashima Takeshi⁴ (1.PNP, 2.Ritsumeikan Univ., 3.TRC, 4.Setsunan Univ.)

Keywords:SiC,THz,ellipsometory

We have proposed THz ellipsometory due to noncontact and nondestructive measurement for electrical properties of semiconductor materials. In this report, we measured 5 kinds of carrier concentrations (1E15 - 1E17cm^-3)of SiC films (about 10um) on SiC substrate using THz ellipsometory. Furthermore, the carrier concentratins of these films also were measured using CV method. As a results, the carrier concentrations by THz ellipsometry were slighty less than those by CV method. The relationship between the THz ellipsometory and CV method correspond to those between Hall and CV method. We expect that it is posible to measure around10¹⁴cm^-3 of the carrier concentration using THz ellipsometory.