[15p-1D-1~11] Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

[15p-1D-1] Creation of a new types of hetero-structures by pulsed excitation deposition

〇Hiroshi Fujioka^1,2, Kohei Ueno¹, Atsushi Kobayashi¹, Jitsuo Ohta¹ (1.the Univ. of Tokyo, 2.JST-ACCEL)

Keywords:Nitride Semiconductor,Low temperature crystal growth

Growth of nitride semiconductors are usually performed at substrate temperatures above 1000C. We have recently developed a new growth technique which utilizes pulsed excitation energy to activate surface migration of adatoms on the substrate surfaces. We have found that this technique allows us to reduce growth temperatures of nitrides dramatically. In this presentation, we will explain the characteristics and growth mechanisms of this new low temperature growth technique. We will also discuss future applications of this technique for creation of new types of hetero-structures.