Symposium

[15p-1D-1~11] Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

Tue. Sep 15, 2015 1:15 PM - 5:45 PM 1D (141+142)

座長:三宅秀人(三重大),片山竜二(東北大),熊谷義直(農工大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:45 PM

[15p-1D-1] Creation of a new types of hetero-structures by pulsed excitation deposition

〇Hiroshi Fujioka^1,2, Kohei Ueno¹, Atsushi Kobayashi¹, Jitsuo Ohta¹ (1.the Univ. of Tokyo, 2.JST-ACCEL)

1:45 PM - 2:15 PM

[15p-1D-2] Dislocation behavior in III-Nitride crystal growth with surface and interface control
- With a focus on GaN bulk crystals grown by Na flux method -

〇Akira Sakai¹, Hirotada Asazu¹, Shotaro Takeuchi¹, Yoshiaki Nakamura¹, Masayuki Imanishi², Mamoru Imade², Yusuke Mori² (1.GSES, Osaka Univ., 2.GSE, Osaka Univ.)

2:15 PM - 2:30 PM

△ [15p-1D-3] Characterization of crystalline structure in nitride semiconductors by three-dimensional reciprocal space mapping using X-ray microdiffraction

〇Shohei Kamada¹, Shotaro Takeuchi¹, Khan Dinh Thanh¹, Hideto Miyake², Kazumasa Hiramatsu², Yasuhiko Imai³, Shigeru Kimura³, Akira Sakai¹ (1.Osaka Univ, 2.Mie Univ, 3.JASRI/SPring-8)

2:30 PM - 2:45 PM

[15p-1D-4] In situ synchrotron X-ray diffraction during MBE growth of nitride semiconductors

〇Masamitu Takahasi^1,2, Takuo Sasaki¹, Ryota Deki² (1.JAEA, 2.Univ. of Hyogo)

Break （2:45 PM - 3:00 PM）

3:00 PM - 3:30 PM

[15p-1D-5] Regularly Arrayed InGaN/GaN-Based Nanocolumns and the Application to Emitters

〇Katsumi Kishino^1,2, Shunsuke Ishizawa¹, Hiroaki Hayashi¹, Kojo Yamano¹, Takao Oto¹, Tatsuya Kano¹ (1.Sophia Univ., 2.Sophia Nanotech. Center)

3:30 PM - 3:45 PM

[15p-1D-6] Blue-violet femtosecond pulse generation using GaN-based semiconductor laser diode

〇Shunsuke Kono¹, Hideki Watanabe¹, Rintaro Koda¹, Noriyuki Fuutagawa¹, Hironobu Narui¹ (1.Sony)

3:45 PM - 4:00 PM

[15p-1D-7] Up to 40 K Operation on 5.76 THz GaN/AlGaN-based Quantum Cascade Laser

〇Wataru Terashima¹, Hideki Hirayama¹ (1.RIKEN)

Break （4:00 PM - 4:15 PM）

4:15 PM - 4:45 PM

[15p-1D-8] Optical properties of semipolar AlGaN quantum wells grown by MOVPE on AlN bulk substrates

Shuhei Ichikawa¹, Mitsuru Funato¹, 〇Yoichi Kawakami¹ (1.Kyoto Univ.)

4:45 PM - 5:00 PM

[15p-1D-9] Electronic and optical characteristics of an m-plane freestanding GaN substrate grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method using an acidic mineralizer

〇Kazunobu Kojima¹, Yusuke Tsukada², Erika Furukawa¹, Makoto Saito^1,2, Yutaka Mikawa², Shuichi Kubo², Hirotaka Ikeda², Kenji Fujito², Akira Uedono³, Shigefusa Chichibu¹ (1.Tohoku Univ., 2.Mitsubishi chemical corp., 3.Univ. of Tsukuba)

5:00 PM - 5:15 PM

△ [15p-1D-10] Blue micro LEDs with n-type AlInN/GaN DBRs

〇Kazuki Ikeyama¹, Yugo Kozuka¹, Masataka Ino¹, Takanobu Akagi¹, Sho Iwayama¹, Norikatsu Koide¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center)

5:15 PM - 5:45 PM

[15p-1D-11] Control of interface on epitaxy of nitride semiconductors on sapphire substrates

〇Hideto Miyake¹, Kazumasa Hiramatsu² (1.Gr.Sch.RIS Mie Univ., 2.Gr.Sch.Eng Mie Univ.)

Sessions

Symposium » Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-