[15p-1D-1~11] Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

[15p-1D-4] In situ synchrotron X-ray diffraction during MBE growth of nitride semiconductors

〇Masamitu Takahasi^1,2, Takuo Sasaki¹, Ryota Deki² (1.JAEA, 2.Univ. of Hyogo)

Keywords:in situ X-ray diffraction,molecular beam epitaxy,nitride semiconductor

We are reporting on a newly-built molecular beam epitaxy chamber designed for in situ synchrotron X-ray diffraction study of growth of nitride semiconductors at BL11XU, SPring-8. Along with the specification of the apparatus, experimental results including growth of GaN and AlN are going to be presented.