[15p-1D-1~11] Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

[15p-1D-2] Dislocation behavior in III-Nitride crystal growth with surface and interface control
- With a focus on GaN bulk crystals grown by Na flux method -

〇Akira Sakai¹, Hirotada Asazu¹, Shotaro Takeuchi¹, Yoshiaki Nakamura¹, Masayuki Imanishi², Mamoru Imade², Yusuke Mori² (1.GSES, Osaka Univ., 2.GSE, Osaka Univ.)

Keywords:Nitride Semiconductor,Dislocation,Na flux method

We have investigated, using transmission electron microscopy, dislocation structure and morphology in GaN bulk crystals grown by the Na flux method. Crystal growth mechanisms characteristic to the Na flux method and related behavior of dislocations were carefully analyzed. Influence of the growth with surface and interface control on the dislocation behavior is also discussed.