[15p-2L-1~13] 6.1 Ferroelectric thin films

[15p-2L-9] Domain Structure in epitaxial orthorhombic HfO₂-based films

〇Takao Shimizu¹, Kiliha Katayma², Takanori Kiguchi³, Takahiro Akama³, Toyohiko Konno³, Hiroshi Uchida⁴, Osami Sakata⁵, Hiroshi Funakubo^1,2 (1.Tokyo Tech. MCES, 2.Tokyo Tech. IGS, 3.Tohoku Univ., 4.Sophia Univ. FST, 5.NIMS)

Keywords:ferroelectrics,hafnium oxide,domain structure

HfO₂-based materials are utilized as high-k gate dielectrics for actual memory devices. Recently the ferroelectricity in the HfO₂-based materials have been discovered. Although most studies on the ferroelectricity have been done with the polycrystalline samples so far, we demonstrate the ferroelectricity even in the epitaxial film. In this presentation, we report the domain structures of the HfO₂-based ferroelectric epitaxial films.