The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Sep 15, 2015 1:30 PM - 7:15 PM 2R (231-2)

座長:立岡 浩一(静岡大),鵜殿 治彦(茨城大)

4:30 PM - 4:45 PM

[15p-2R-12] Studies of stable structures of BaSi2(011)/(011) twin boundaries by first-principle calculations

〇Masakazu Baba1, Masanori Koyama2, Kaoru Toko1, Takashi Suemasu1,3 (1.Univ. Tsukuba, 2.AIST, 3.JST-CREST)

Keywords:silicide,grain boundary

There are a lot of grain boundaries (GBs) in BaSi2 which consist of (011)-plane. In addition, they show downward band bending. We studies these GBs as a (011)/(011) twin boundaries with only Ba atoms at GBs. In this work, we focus on another candidate of GBs structure by Ba and Si atoms. From the view points of GB energy, GBs consist of Ba and Si atoms are more stable than those of Ba atoms.