5:00 PM - 5:15 PM
[15p-2R-14] Characterization of defect levels in boron p-BaSi2 epitaxial films on Si(111) by deep level transient spectroscopy
Keywords:BaSi2,defect levels,impurity
Oral presentation
13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices
Tue. Sep 15, 2015 1:30 PM - 7:15 PM 2R (231-2)
座長:立岡 浩一(静岡大),鵜殿 治彦(茨城大)
5:00 PM - 5:15 PM
Keywords:BaSi2,defect levels,impurity