5:45 PM - 6:00 PM
[15p-2R-17] Control of Electrical Properties of BaSi2 Thin Films by Alkali-metal-fluoride Treatment
Keywords:Silicide semiconductor,Impurity doping,Alkali metal
We have investigated the alkali-metal doping of BaSi2 films by means of the deposition of alkali-metal fluorides followed by annealing. It has been found that LiF treatment with annealing at 400 and 500 oC enhances electron density up to 1020 cm−3 while NaF or KF treatment is not effective for carrier density control. A doping mechanism is proposed based on structural characterization that Li is incorporated into BaSi2 as a donor at the same time as the dissociation of LiF.