The 76th JSAP Autumn Meeting, 2015

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Sep 15, 2015 1:30 PM - 7:15 PM 2R (231-2)

座長:立岡 浩一(静岡大),鵜殿 治彦(茨城大)

6:00 PM - 6:15 PM

[15p-2R-18] Investigation of formation mechanism of orientation of BaSi2 films grown by vacuum evaporation

〇(M2)Yoshihiko Nakagawa1, Kosuke O. Hara2,3, Yasuyoshi Kurokawa1, Takashi Suemasu3,4, Noritaka Usami1,3 (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.JST-CREST, 4.Univ. of Tsukuba)

Keywords:BaSi2,vacuum evaporation