Poster presentation

[15a-PB3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Sep 15, 2015 9:30 AM - 11:30 AM PB3 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[15a-PB3-1] Thickness dependence of grain size of BaSi₂ films on Si(111) substrates by MBE

〇Daichi Tsukahara¹, Masakazu Baba¹, Kaoru Toko¹, Takashi Suemasu^1,2 (1.Univ. Tsukuba, 2.JST-CREST)

9:30 AM - 11:30 AM

[15a-PB3-2] Preparation of BaSi₂ thin-films by helicon-wave-plasma sputtering

〇(M1)Seiya Yokoyama¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu^1,3 (1.Tsukuba Univ., 2.Tosoh., 3.JST-CREST.)

9:30 AM - 11:30 AM

▲ [15a-PB3-3] Study on minority-carrier lifetime mapping of BaSi₂ formed on multicrystalline Si substrates

〇YUNPENG LI¹, MASAKAZU BABA¹, TRINH CHAM THI², KAORU TOKO¹, TAKASHI SEKIGUCHI³, NORITAKA USAMI^2,4, TAKASHI SUEMASU^1,4 (1.Univ. Tsukuba, 2.Nagoya Univ., 3.NIMS, 4.JST-CREST)

9:30 AM - 11:30 AM

[15a-PB3-4] Development of Mg₂Si photodiode with ring electrode and mesa structure

〇Nobuhiko Hori¹, Shuntaro Tanigawa², Daijyu Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

9:30 AM - 11:30 AM

[15a-PB3-5] Electrical property of single-phase MnSi_1.75-x grown from solutionⅡ

〇shunpei hori¹, Masaru Iioka¹, Yoshiaki Hara², Haruhiko Udono¹ (1.Ibaraki Univ., 2.Ibaraki College of Tech.)

9:30 AM - 11:30 AM

[15a-PB3-6] Photoluminescence properties of air-annealed β-FeSi₂ bulk single crystal

〇Haruya Kobayashi¹, Keisuke Sato¹, Kan-ichiro Nakaoka¹, Yoshiaki Hara¹ (1.NIT, Ibaraki Col.)

9:30 AM - 11:30 AM

△ [15a-PB3-7] Synthesis of Si-based flower-like nanostructures

〇Hiroaki Suzuki¹, Xiang Meng¹, Hirokazu Tatsuoka¹ (1.Shizuoka Univ.)

9:30 AM - 11:30 AM

△ [15a-PB3-8] Synthesis of Si-based Nanostructures using silicides as templates by IP6 treatment

〇kenta sasaki¹, Koki Sano¹, Xiang Meng¹, Hiroaki Suzuki¹, Hirokazu Tatsuoka¹ (1.Shizuoka Univ.)

9:30 AM - 11:30 AM

[15a-PB3-9] Effect of Annealing on Structural Properties of Silicon Implanted by Xenon-ion III

〇atsushi kitagawa¹, Hitoe Habuchi¹, Tamio Iida¹, Fumitaka Ohashi², Takayuki Ban², Tetsuji Kume², Shuichi Nonomura² (1.Natl. Inst. Technol., Gifu Coll, 2.Gifu Univ.)

9:30 AM - 11:30 AM

[15a-PB3-10] Electric characteristic evaluation of Graphene layer on Si with patterning Ni

〇(M1)Yukinori Arima¹, Makoto Miyoshi¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech)

9:30 AM - 11:30 AM

[15a-PB3-11] Quantum transport simulation for electrical conduction characteristics of the strained graphene p-n junction

〇(M1)Keisuke Ichihara¹, Kenji Sasaoka¹, Matsuto Ogawa¹, Satofumi Souma¹ (1.Kobe Univ.)

9:30 AM - 11:30 AM

▲ [15a-PB3-12] Magnetic properties in magnetron sputtering prepared ZnO:Mn thin films

〇Yu Zhang¹, Nao Nasu¹, Xinwei Zhao¹ (1.Tokyo Univ. of Sci.)

Oral presentation

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Sep 15, 2015 1:30 PM - 7:15 PM 2R (231-2)

座長:立岡浩一(静岡大),鵜殿治彦(茨城大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[15p-2R-1] [Young Scientist Presentation Award Speech] Crystal structure and thermoelectric properties of the novel compound prepared in the Na–Al–Sn system

〇Masahiro Kanno¹, Takahiro Yamada¹, Hisanori Yamane¹, Hideaki Nagai² (1.IMRAM Tohoku Univ., 2.AIST)

1:45 PM - 2:00 PM

[15p-2R-2] Chemical vapor deposition of silicide films composed of W-encapsulating Si clusters

〇Naoya Okada^1,2, Noriyuki Uchida², Toshihiko Kanayama² (1.JST-PRESTO, 2.AIST)

2:00 PM - 2:15 PM

[15p-2R-3] Optical characterization of Na doped type II Ge clathrate films grown on sapphire substrate

Hiroyuki Manjo¹, Tetsuya Mukai¹, Shota Suzuki¹, 〇Fumitaka Ohashi¹, Takayuki Ban¹, Tetsuji Kume¹, Shuichi Nonomura¹ (1.Gifu Univ.)

2:15 PM - 2:30 PM

[15p-2R-4] Abnormal electrical property by applying dynamic strain in p-type Si wafer

〇Kazuki Tsuruta¹, Masaki Mito¹, Takayuki Tajiri², Yuki Katamune³, Tsuyoshi Yoshitake³ (1.Kyushu Inst. of Tech., 2.Fukuoka Univ., 3.Kyushu Univ.)

2:30 PM - 2:45 PM

▲ [15p-2R-5] Damage free neutral beam texturing of honeycomb pattern for the application of light trapping in Si Solar cells

〇(P)Halubai Sekhar¹, Hitoshi Sai², Aiko Sato³, Mohammad Maksudur Rahman⁴, Tomohiro Kubota⁴, Seiji Samukawa^4,5, Hidetaka Takato¹, Michio Kondo¹ (1.Fukushima Renewable Energy Institute, AIST, Japan, 2.RCPV, Tsukuba, AIST, Japan, 3.Fukushima University, Japan, 4.Institute of Fluid Science, Tohoku University, Sendai, Japan, 5.WPI Advanced Institute for Materials Research, Tohoku University, Sendai, Japan)

2:45 PM - 3:00 PM

[15p-2R-6] High-pressure synthesis of carbon nitride related material with nano-amorphous carbon nitride precursor

〇Nozomu Yasui¹, Masaya Sougawa¹, Masaaki Hirai¹, Kaoru Yamamoto¹, Kenichi Takarabe¹, Taku Okada², Daisuke Yamazaki³, Yohei Kojima⁴, Hiroaki Ohfuji⁴, Shinsuke Kunitsugu⁵, Junji Sawahata⁶ (1.Okayama Univ.of Sci., 2.ISSP, Univ. of Tokyo, 3.ISEI, Okayama Univ., 4.GRC, Ehime Univ., 5.ITCO, 6.Ibaraki Nat. Col. Tech.)

3:00 PM - 3:15 PM

[15p-2R-7] Luminescence Properties of Gallium-Doped Zinc Oxide Nanowire

〇takaya nakane¹ (1.Toyohashi Univ.)

3:15 PM - 3:30 PM

[15p-2R-8] Evalution of the Mn-doped ZnO thin film formed on sapphire substrates.

〇Nao Nasu¹, Yu Zhang¹, Xinwei Zhao¹ (1.Tokyo Univ. of Sci)

3:30 PM - 3:45 PM

[15p-2R-9] Li Ion Dynamics Assisted Nonvolatile Voltage Memory

〇Issei Sugiyama¹, Tohru Suzuki¹, Ryota Shimizu¹, Susumu Shiraki¹, Taro Hitosugi¹ (1.Tohoku Univ.)

3:45 PM - 4:00 PM

[15p-2R-10] Quantum dynamics simulation of strained grapheme using time-dependent wave packet propagation method

〇Shotaro Sakoda¹, Kenji Sasaoka¹, Matsuto Ogawa¹, Satofumi Souma¹ (1.Kobe Univ.)

4:00 PM - 4:15 PM

[15p-2R-11] Analysis of time dependent electrical transport properties of strained armchair graphene nanoribbons by using the Schrödinger equation for an open system

〇(M1)daiki katou¹, kenji sasaoka¹, matsuto ogawa¹, satofumi souma¹ (1.Kobe Univ.)

Break （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

△ [15p-2R-12] Studies of stable structures of BaSi₂(011)/(011) twin boundaries by first-principle calculations

〇Masakazu Baba¹, Masanori Koyama², Kaoru Toko¹, Takashi Suemasu^1,3 (1.Univ. Tsukuba, 2.AIST, 3.JST-CREST)

4:45 PM - 5:00 PM

[15p-2R-13] Characterization of electrical and optical properties of BaSi₂ epitaxial films
grown on Si(111) by molecular beam epitaxy with in-situ MoO_x capping

〇Hiroki Takeuchi¹, Weijie Du¹, Ryouta Takabe¹, Kaoru Toko¹, Kousuke Hara², Noritaka Usami^3,4, Takashi Suemasu^1,4 (1.Univ. Tsukuba, 2.Univ. Yamanashi, 3.Nagoya Univ., 4.JST-CREST)

5:00 PM - 5:15 PM

[15p-2R-14] Characterization of defect levels in boron p-BaSi₂ epitaxial films on Si(111) by deep level transient spectroscopy

〇Hiroki Takeuchi¹, Weijie Du¹, Ryouta Takabe¹, Kaoru Toko¹, Takashi Suemasu^1,2 (1.Univ. Tsukuba, 2.JST-CREST)

5:15 PM - 5:30 PM

[15p-2R-15] Measurement of valence-band offset at native oxide/BaSi₂ interfaces using hard x-ray photoelectron spectroscopy

〇Ryota Takabe¹, Keita Ito^1,2,3, Weijie Du¹, Kaoru Toko¹, Shigenori Ueda⁴, Akio Kimura⁵, Takashi Suemasu^1,6 (1.Univ. Tsukuba, 2.JSPS, 3.Tohoku Univ., 4.SPring-8/NIMS, 5.Hiroshima Univ., 6.JST-CREST)

5:30 PM - 5:45 PM

[15p-2R-16] Photoresponse properties of BaSi₂ epitaxial films on Ge(111) substrates

〇Ryota Takabe¹, Masakazu Baba¹, Weijie Du¹, Kosuke O. Hara², Kaoru Toko¹, Noritaka Usami^3,4, Takashi Suemasu^1,4 (1.Univ. Tsukuba, 2.Univ. Yamanashi, 3.Nagoya Univ., 4.JST-CREST)

5:45 PM - 6:00 PM

[15p-2R-17] Control of Electrical Properties of BaSi₂ Thin Films by Alkali-metal-fluoride Treatment

〇Kosuke Hara^1,2, Weijie Du³, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Kaoru Toko³, Takashi Suemasu^2,3, Noritaka Usami^2,4 (1.Univ. Yamanashi, 2.JST-CREST, 3.Univ. Tsukuba, 4.Nagoya Univ.)

6:00 PM - 6:15 PM

[15p-2R-18] Investigation of formation mechanism of orientation of BaSi₂ films grown by vacuum evaporation

〇(M2)Yoshihiko Nakagawa¹, Kosuke O. Hara^2,3, Yasuyoshi Kurokawa¹, Takashi Suemasu^3,4, Noritaka Usami^1,3 (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.JST-CREST, 4.Univ. of Tsukuba)

6:15 PM - 6:30 PM

[15p-2R-19] Evaluation of BaSi₂ semiconductor thin film fabricated by co-evaporation method

〇Atsuya Sasaki¹, Akito Sasaki¹, Yoshinori Kataoka¹, Katsuaki Aoki¹, Shuichi Saito¹, Kumpei Kobayashi¹ (1.Toshiba Materials)

6:30 PM - 6:45 PM

[15p-2R-20] Polarized Raman spectra of BaSi₂ epitaxial film

〇Haruki Yamaguchi¹, Sumito Ogata¹, Hiroaki Tsukamoto¹, Takashi Suemasu², Yoshikazu Terai^1,3 (1.Kagoshima Univ., 2.Univ. of Tsukuba, 3.Kyushu Inst. of Tech.)

6:45 PM - 7:00 PM

[15p-2R-21] Photoreflectance spectra of BaSi₂ epitaxial film

〇Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Kazuki Yamasaki³, Takashi Suemasu², Yoshikazu Terai^1,3 (1.Kagoshima Univ., 2.Univ. of Tsukuba, 3.Kyushu Inst. of Tech.)

7:00 PM - 7:15 PM

[15p-2R-22] Crystal Structure and energy gap of Ba_1-xSr_xSi₂

〇Motoharu Imai¹, Yoshitaka Matsushita¹ (1.NIMS)

Oral presentation

[16a-2R-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 2R (231-2)

座長:末益崇(筑波大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[16a-2R-1] Preparation of Fe₃Si/FeSi₂/FeSi₃ Spin Valve Films

Kazuya Ishibashi¹, Yuki Asai¹, Kazutoshi Nakashima¹, Ken-ichiro Sakai², 〇Tsuyoshi Yoshitake¹ (1.Kyushu Univ., 2.Kurume NCT)

9:15 AM - 9:30 AM

[16a-2R-2] High Density Formation of Fe-silicide Nanodots Induced by Remote H₂ Plasma and Characterization of Their Crystalline Structure and Magnetic Properties

〇Hai Zhang¹, Katsunori Makihara¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

9:30 AM - 9:45 AM

[16a-2R-3] Study of thermal stability of Fe₃Si /Si(111) heterointerfaces

〇Yoshihito Maeda^1,2, Yuki Kawakubo¹, Yoshikazu Terai¹, Kazumasa Narumi², Seiji Sakai² (1.Kyutech, 2.JAEA)

9:45 AM - 10:00 AM

[16a-2R-4] Ion beam analysis of oxidation behavior of β-FeSi₂/Si

〇Yoshihito Maeda^1,2, Yuya Noguchi¹, Yoshikazu Terai¹, Kazumasa Narumi², Seiji Sakai² (1.Kyutech, 2.JAEA)

10:00 AM - 10:15 AM

[16a-2R-5] Photoluminescence properties of N-doped β-FeSi₂ films

〇Kensuke Akiyama^1,2, Ryo Takahashi¹, Yoshihisa Matsumoto¹, Hiroshi Funakubo² (1.Kanagawa Indu. Tech. Cent., 2.Tokyo Inst. Tech.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[16a-2R-6] Development of Spectrally-Selective Infrared Emitters having High Selectivity with FeSi₂/W Thin Film

〇Shoma Masunaka¹, Kensuke Nishiura¹, Kyoko Namura¹, Motofumi Suzuki¹ (1.Kyoto Univ.)

10:45 AM - 11:00 AM

[16a-2R-7] Transport properties of β-FeSi₂ polycrystalline films (II)

〇Takahiko Higashi¹, Tetsu Hattori¹, Yoshikazu Terai^1,2 (1.Kagoshima Univ., 2.Kyusyu Inst. of Tech.)

11:00 AM - 11:15 AM

[16a-2R-8] Activation processes of impurities in B-doped β-FeSi₂ polycrystalline thin films

〇Tetsu Hattori¹, Yusuke Mimura¹, Takahiko Higashi¹, Haruki Yamaguchi¹, Yoshikazu Terai^1,2 (1.Kagoshima Univ., 2.Kyushu Inst. of Tech.)

11:15 AM - 11:30 AM

[16a-2R-9] Thermal Expansion of beta-FeSi₂ and Mg₂Si

〇Motoharu Imai¹, Yukihiro Isoda¹, Haruhiko Udono² (1.NIMS, 2.Ibaraki Univ.)

11:30 AM - 11:45 AM

[16a-2R-10] Fabrication and electrical properties of mesa-structured Mg₂Si pn-junction diode

〇tomohiro akiyama¹, nobuhiko hori¹, haruhiko udono¹ (1.Ibaraki Univ.)

11:45 AM - 12:00 PM

△ [16a-2R-11] Preparation of Ca-Mg-Si Films by Sputtering Method and Their Properties

〇Mutsuo Uehara¹, Mao Kurokawa¹, Kensuke Akiyama^1,2, Masaaki Matsushima¹, HIroshi Uchida³, Yoshisato Kimura¹, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Kanagawa Industrial Technology Center, 3.Sophia Univ.)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15a-PB3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [15a-PB3-3] Study on minority-carrier lifetime mapping of BaSi2 formed on multicrystalline Si substrates

△ [15a-PB3-7] Synthesis of Si-based flower-like nanostructures

△ [15a-PB3-8] Synthesis of Si-based Nanostructures using silicides as templates by IP6 treatment

▲ [15a-PB3-12] Magnetic properties in magnetron sputtering prepared ZnO:Mn thin films

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [15p-2R-5] Damage free neutral beam texturing of honeycomb pattern for the application of light trapping in Si Solar cells

△ [15p-2R-12] Studies of stable structures of BaSi2(011)/(011) twin boundaries by first-principle calculations

[16a-2R-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

△ [16a-2R-11] Preparation of Ca-Mg-Si Films by Sputtering Method and Their Properties

Authentication

▲ [15a-PB3-3] Study on minority-carrier lifetime mapping of BaSi₂ formed on multicrystalline Si substrates

△ [15p-2R-12] Studies of stable structures of BaSi₂(011)/(011) twin boundaries by first-principle calculations