The 76th JSAP Autumn Meeting, 2015

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Sep 15, 2015 1:30 PM - 7:15 PM 2R (231-2)

座長:立岡 浩一(静岡大),鵜殿 治彦(茨城大)

5:00 PM - 5:15 PM

[15p-2R-14] Characterization of defect levels in boron p-BaSi2 epitaxial films on Si(111) by deep level transient spectroscopy

〇Hiroki Takeuchi1, Weijie Du1, Ryouta Takabe1, Kaoru Toko1, Takashi Suemasu1,2 (1.Univ. Tsukuba, 2.JST-CREST)

Keywords:BaSi2,defect levels,impurity