The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Sep 15, 2015 1:30 PM - 7:15 PM 2R (231-2)

座長:立岡 浩一(静岡大),鵜殿 治彦(茨城大)

4:45 PM - 5:00 PM

[15p-2R-13] Characterization of electrical and optical properties of BaSi2 epitaxial films
grown on Si(111) by molecular beam epitaxy with in-situ MoOx capping

〇Hiroki Takeuchi1, Weijie Du1, Ryouta Takabe1, Kaoru Toko1, Kousuke Hara2, Noritaka Usami3,4, Takashi Suemasu1,4 (1.Univ. Tsukuba, 2.Univ. Yamanashi, 3.Nagoya Univ., 4.JST-CREST)

Keywords:BaSi2,air exposure