[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

[15p-2R-4] Abnormal electrical property by applying dynamic strain in p-type Si wafer

〇Kazuki Tsuruta¹, Masaki Mito¹, Takayuki Tajiri², Yuki Katamune³, Tsuyoshi Yoshitake³ (1.Kyushu Inst. of Tech., 2.Fukuoka Univ., 3.Kyushu Univ.)

Keywords:semiconductor,silicon,dynamic strain

Generally, the piezoresistance and strained silicon are known as control of physical properties using the strain in semiconductor. Amplitude of this strain does not change against time, we call static strain. We replaced the static strain with a dynamic strain which the amplitude of the strain changed at the ultrasonic frequency because we expected that the carrier mobility or the electrical resistance improved under the dynamic strain. We could observe the abnormal behavior in the electrical resistance measurement of p-type silicon wafer.