The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16a-2R-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 2R (231-2)

座長:末益 崇(筑波大)

9:45 AM - 10:00 AM

[16a-2R-4] Ion beam analysis of oxidation behavior of β-FeSi2/Si

〇Yoshihito Maeda1,2, Yuya Noguchi1, Yoshikazu Terai1, Kazumasa Narumi2, Seiji Sakai2 (1.Kyutech, 2.JAEA)

Keywords:semiconducting silicide,iron silicide,light emission

We have reported direct formation of β/SiO2 nanocomposites from β/Si one by emplying a selective oxidation process and photoluminesence near room temperature from the β/SiO2 nanocomposite. In this study, using ion beam analysis we invesitigated the oxidation process of β/Si nanocomposites and a rate behavior to control oxidation.