The 76th JSAP Autumn Meeting, 2015

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Sep 15, 2015 1:30 PM - 7:15 PM 2R (231-2)

座長:立岡 浩一(静岡大),鵜殿 治彦(茨城大)

7:00 PM - 7:15 PM

[15p-2R-22] Crystal Structure and energy gap of Ba1-xSrxSi2

〇Motoharu Imai1, Yoshitaka Matsushita1 (1.NIMS)

Keywords:BaSi2,crystal structure,energy gap

We determined the crystal structure of Ba1-xSrxSi2 and its energy gap.