[15p-2W-1~23] 2.2 Detection systems

[15p-2W-7] Simulation and Fabrication of 0.625-mm-thick Gated Silicon Drift Detector

〇Hideharu Matsuura¹, Derek Hullinger², Keith Decker² (1.OECU, 2.MOXTEK)

Keywords:X-ray detector,Silicon,Gated Silicon Drift Detector

We simulate the electric potential distribution in a GSDD with a Si substrate having thickness of 0.625 mm and resistivity of 10 kΩ·cm, and we perform fundamental experiments on a fabricated prototype. In the simulated electric potential distribution, the electric field was strong enough that all electrons produced by X-ray photons flowed toward the anode. An energy resolution of 145 eV at 5.9 keV is experimentally obtained from an ⁵⁵Fe source at -38 °C.