[15p-2W-1~23] 2.2 Detection systems

△ [15p-2W-8] Simulation of Gated Silicon Drift Detector Using a Low-Resistivity Wafer

〇(M1)Akinobu Takeshita¹, Shungo Sakurai¹, Yuya Oda¹, Sinya Fukushima¹, Shohei Ishikawa¹, Atsuki Hidaka¹, Hideharu Matsuura¹ (1.OECU)

Keywords:X-ray Detector

We simulate the electric potential distribution at -150 V in a GSDD with a Si substrate having thickness of 0.5 mm and resistivity of 2 kΩ·cm. In the simulated electric potential distribution, the electric field was strong enough that all electrons produced by X-ray photons flowed toward the anode. Therefore, it is found that the GSDD design mentioned is applicable to the fabrication of inexpensive GSDDs.