[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

[15p-4C-8] Diode Operation in Normally-off GaN HEMT with High Controllability of Threshold Voltage

〇TAKAYA NAGAI¹, Naoki Kato¹, Tomotaka Narita¹, Yamato Osada², Ryuichiro Kamimura², Kenji Itou³, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech., 2.ULVAC, 3.Kanazawa Inst. of Tech.)

Keywords:GaN,Diode