[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

[15p-4C-9] Temperature Characteristics in δ-doped GaN Cap/AlGaN/GaN Heterostrucutre

〇(M1)naoki kato¹, Takaya Nagai¹, Akio Wakejima¹, Takashi Egawa¹, Yamato Osada², Ryuichiro Kamimura² (1.Nagoya Inst. of Tech, 2.ULVAC)

Keywords:GaN,HEMT,2DEG