The 76th JSAP Autumn Meeting, 2015

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6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[15p-4F-1~25] 6.2 Carbon-based thin films

Tue. Sep 15, 2015 1:15 PM - 8:00 PM 4F (438)

座長:小山 和博(デンソー),齊藤 丈靖(大阪府立大),嘉数 誠(佐賀大)

1:15 PM - 1:30 PM

△ [15p-4F-1] Fabrication of diamond surface-channel FET structure using ferroelectric gate insulator

〇RYOTA KARAYA1, Hiroki Furuichi1, Ikki Baba1, Yosuke Mori1, Takashi Nakajima2, Norio Tokuda1, Takeshi Kawae1 (1.Kanazawa Univ., 2.Tokyo Univ. of Sci.)

Keywords:diamond,FET,VDF/TrFE