Oral presentation

[14a-4F-1~11] 6.2 Carbon-based thin films

Mon. Sep 14, 2015 9:00 AM - 12:00 PM 4F (438)

座長:比嘉晃(琉球大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [14a-4F-1] Deposition of DLC Thin Film on Sacrificial Rock Sugar and its Self-Standing

〇masafumi yamano¹, yu miyamoto¹, takahiro imai¹, Toru Harigai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Masao Kamiya², Makoto Taki³, Yushi Hasegawa³, Nobuhiro Tsuji³, Mamiko Nishiuchi⁴, Hironao Sakaki⁴, Kiminori Kondoaa⁴ (1.Toyohashi Univ. of Tec., 2.Itoh Opt. Ind. Co., Ltd., 3.Onward Ceramic Coating Co., Ltd., 4.Japan atomic energy agency)

9:15 AM - 9:30 AM

△ [14a-4F-2] Release-in-Water of Thin Films Deposited on Water-Soluble Sacrificial Layer

〇(M2)yu miyamoto¹, Masafumi Yamano¹, Yuma Fujii¹, Toru Harigai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Makoto Taki², Yushi Hasegawa², Nobuhiro Tsuji², Mamiko Nishiuchi³, Hirona Sakaki³, Kiminori Kondo³ (1.Toyohashi Univ. of Technol, 2.Onward Ceramic Coating Co., Ltd., 3.JAEA)

9:30 AM - 9:45 AM

[14a-4F-3] Multi-layer-model analysis for amorphous hydrogenated carbon films

〇Nobuya Kubo¹, Satoru Arakawa¹, Sarayut Tunmee¹, Xiao Long Zhou¹, Keiji Komatsu¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ.Tech.)

9:45 AM - 10:00 AM

△ [14a-4F-4] Around-100℃ Deposition Temperature Dependence of DLC Films Prepared by Filtered Arc Deposition

〇(M2)Yuma Fujii¹, Takahiro Imai¹, Yu Miyamoto¹, Toru Harigai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Hideto Tanoue², Masao Kamiya³, Makoto Taki⁴, Yushi Hasegawa⁴, Nobuhiro Tsuji⁴, Satoru Kaneko⁵, Haruyuki Yasui⁶, Shinsuke Kunitsugu⁷, Masahiro Kawaguchi⁸, Kenichi Miura⁹ (1.Toyohashi Univ. of Technol., 2.Kitakyushu National College of Technol., 3.Itoh Opt. Ind. Co., Ltd., 4.Onward Ceramic Coating Co., Ltd., 5.Kanagawa Industrial Technology Center, 6.Industrial Research Institute of Ishikawa, 7.Industrial Technology Center of Okayama Prefecture, 8.Tokyo Metropolitan Industrial Technology Research Institute, 9.Technology Research Institute of Osaka Prefecture)

10:00 AM - 10:15 AM

△ [14a-4F-5] Fluorinated Diamond-Like Carbon Films Prepared by Filtered Arc Deposition

〇Takahiro Imai¹, Yuma Fujii¹, Masafumi Yamano¹, Toru Harigai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Masao Kamiya², Makoto Taki³, Yushi Hasegawa³, Nobuhiro Tsuji³ (1.Toyohashi Univ. of Thechnol., 2.Itoh Opt. Ind. Co., Ltd., 3.Onward Ceramic Coating Co., Ltd.)

10:15 AM - 10:30 AM

△ [14a-4F-6] Effect of soft X-ray on the surface of fluorinated DLC films

〇Hiroki Takamatsu¹, Masahito Niibe¹, Kazuhiro Kanda¹ (1.Univ. Hyogo)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[14a-4F-7] Conduction type controlling of hydrogenated amorphous carbon by calcium doping

〇Yusuke Terada¹, Katsuhiro Akimoto¹ (1.Tsukuba Univ.)

11:00 AM - 11:15 AM

▲ [14a-4F-8] Feasibility Study on Corrosion of Diamond-Like Carbon Films by Soft X-ray Photoelectron Emission Microscopy

〇(D)Sarayut Tunmee¹, Pat Photongkam², XiaoLong Zhou¹, Satoru Arakawa¹, Haruhiko Ito¹, Kazuhiro Kanda³, Keiji Komatsu¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.Synchrotron Light Research Inst., 3.LASTI, Univ. of Hyogo)

11:15 AM - 11:30 AM

[14a-4F-9] Investigation of oxygen plasma treatment for surface modification of DLC films

〇yuta kawachi¹, Takuya koide¹, Ryoya yamaguchi¹, Akihiko Homma¹, Kenji Hirakuri¹, Ohgoe Yasuharu¹ (1.Tokyo Denki Univ.)

11:30 AM - 11:45 AM

△ [14a-4F-10] Control of released quantity from Zn doped DLC

〇(B)Junichi Katono¹, Yasufumi Mabuchi¹, Kohki Fujioka², Yasuharu Ohgoe¹, Keisuke Sato¹, Masanori Hiratsuka³, Hitomi Tsuboi³, Hideki Nakamori³, Hideki Masuda⁴, Hiroshi Honda⁴, Yoshinobu Manome², Kenji Hirakuri¹ (1.Tokyo Denki Univ., 2.Jikei Univ., 3.Nanotec Co., 4.Nition Co.)

11:45 AM - 12:00 PM

[14a-4F-11] Fabrication of fluorine-functionalized polymer materials by photochemical modification

〇Takako Nakamura¹, Tsuguyori Ohana¹, Tetsuo Tsuchiya¹ (1.AIST)

Poster presentation

[14p-PA9-1~14] 6.2 Carbon-based thin films

Mon. Sep 14, 2015 4:00 PM - 6:00 PM PA9 (Event Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

△ [14p-PA9-1] EBIC evaluation of electric field enhancement on diamond SBD

〇(D)Hiroki Gima^1,3, Hitoshi Umezawa^2,3,4, Khaled Driche^3,4, Yukako Kato², Yoshiaki Mokuno², Fabrice Donatini^3,4, Etienne Gheereart^3,4, Tsuyoshi Yoshitake¹ (1.Kyushu Univ., 2.AIST, 3.CNRS, Inst. NEEL, 4.Univ. Grenoble Alpes, Inst. NEEL)

4:00 PM - 6:00 PM

△ [14p-PA9-2] Fabrication of polycrystalline diamond FET structure with VDF/TrFE gate

〇(M1)Hiroki Furuichi¹, Karaya Ryota¹, Mori Yosuke¹, Nakajima Takashi², Tokuda Norio¹, Kawae Takeshi¹ (1.Kanazawa Uinv., 2.Tokyo Univ. of Sci.)

4:00 PM - 6:00 PM

[14p-PA9-3] silver coating to diamond powder(3)

〇(M2C)TOSHIAKI IYAMA¹, Ryuji Oshima¹, Kanji Iizuka¹ (1.N.I.T)

4:00 PM - 6:00 PM

[14p-PA9-4] Dissociative excitation reaction of organosilanes in microwave discharge flow of Ar. – Optical emission spectroscopy under the radio-frequency biased conditions -

〇SYUNSUKE SAEKI¹ (1.Nagaoka Univ. of Tech.)

4:00 PM - 6:00 PM

[14p-PA9-5] A laboratory prototype of visible-light-driven diaphram using amorphous carbon nitride films

〇Tomo Harata¹, Masami Aono¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (1.NDA)

4:00 PM - 6:00 PM

[14p-PA9-6] Iodine doping of amorphous carbon based thin films

〇naoaki urasaki¹, so maeara¹, masaaki yamazato¹, akira higa¹ (1.Ryukyu Univ.)

4:00 PM - 6:00 PM

[14p-PA9-7] Emission and Excitation spectrum of Laser irradiated a-CN_x

〇KAZUTOSHI IKEDA¹, Kazutoshi Fukui¹, Kohji Yamamoto², Ken-ichi Takarabe³, Shigeyuki Nakamura⁴, Kunio Itoh⁵, Shin-ichi Yamamoto⁵, Kazuya Uchishima⁵, Junji Sawahata⁶, Masaki Satake⁷ (1.Fac. of Engi., Univ. of Fukui, 2.FIR Center, Univ. of Fukui, 3.Fac. of Sci., Okayama Univ. Sci., 4.Tsuyama Nat. Col. Tech, 5.Fac. of Engi. , Ryukoku Univ, 6.Ibaraki Nat. Col. Tech, 7.Akashi Nat. Col. Tech)

4:00 PM - 6:00 PM

△ [14p-PA9-8] Properties of Graphitic Carbon Nitride Films Prepared by Evaporation with Various Temperatures

〇Shiori Fujita¹, Hitoe Habuchi¹, Hiromasa Horie¹, Hirofumi Takikawa² (1.Natl. Inst. Technol. , Gifu Coll., 2.Toyohashi Univ. Technol.)

4:00 PM - 6:00 PM

[14p-PA9-9] Deposition of a-CN_x:H films with high nitrogen content formed from the microwave discharge flow of organic vapor/N₂ gas mixture
- Identification of the nitrogen source based on the gas phase spectroscopy -

〇Nobuyoshi Mogi¹, Haruhiko Ito¹ (1.Nagaoka Univ. of Tech)

4:00 PM - 6:00 PM

[14p-PA9-10] Diffusion of nitrogen molecules to amorphous carbon nitride films under the N₂ ambient

〇Naoyuki Tamura¹, Masami Aono¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (1.NDA)

4:00 PM - 6:00 PM

[14p-PA9-11] Deposition of a-CN_x : H films with high nitrogen content formed from the microwave discharge flow of organic vapor / N₂ gas mixture - Structural analysis

〇Kenya Hiramatsu¹, Hidetoshi Saitoh¹, Haruhiko Ito¹ (1.Nagaoka Univ. of Tech.)

4:00 PM - 6:00 PM

△ [14p-PA9-12] Fabrication of DLC Films with Different Characteristic Layers by Filtered Arc Deposition

〇Tooru Harigai¹, Masafumi Yamano¹, Yu Miyamoto¹, Yuma Fujii¹, Takahiro Imai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Masao Kamiya², Makoto Taki³, Yushi Hasegawa³, Nobuhiro Tsuji³ (1.Toyohashi Univ. of Tec., 2.Itoh Opt. Ind. Co., Ltd., 3.Onward Ceramic Coating Co., Ltd.)

4:00 PM - 6:00 PM

△ [14p-PA9-13] Estimation of DLC film deposition using RGB measurement of plasma emission

〇(B)Masasi Saitou¹, Yuta Kawachi¹, Akihiko Homma¹, Kenji Hirakuri¹, Yasuharu Ohgoe¹ (1.Tokyo Denki Univ.)

4:00 PM - 6:00 PM

[14p-PA9-14] Evaluation of the Characteristic of DLC and SEM Photomicrographs to Observe Living Virus

Sho Uemoto¹, Masakazu Kadowaki¹, Ryouta Kimura¹, Norio Nawachi², Tadahiko Shiono², 〇Tomotaka Kozuki¹ (1.Hiroshima Int'l Univ., 2.Hiroshima Pref. Tech. Res. Inst.)

Oral presentation

[15a-4F-1~9] 6.2 Carbon-based thin films

Tue. Sep 15, 2015 9:00 AM - 11:45 AM 4F (438)

座長:大越康晴(電機大),波多野睦子(東工大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[15a-4F-1] Multi Graphene Growth on Pencil Drawing Sliver-Halide Print Paper Irradiated by Femtosecond Laser

〇Satoru Kaneko^1,2, Yoshitada Shimizu¹, Takeshi Rachi¹, Chihiro Kato¹, Satomi Tanaka¹, Manabu Yasui¹, Daishi Shiojiri², Akifumi Matsuda², Mamoru Yoshimoto² (1.Kanagawa Ind. Tech. Center, 2.Tokyo Inst. Tech.)

9:15 AM - 9:30 AM

[15a-4F-2] a-CNx:H/Al Multi-Layer Films for Field Emission Use by Supermagnetron Plasma CVD

〇Haruhisa Kinoshita¹, Sho Suzuki¹, Ryouhei Taguchi¹, Yoku Murayama¹ (1.Shizuoka Univ.)

9:30 AM - 9:45 AM

[15a-4F-3] Bandgap control of CVD camphoric carbon thin films with HMDS

〇Satoru Toda¹, Yuki Sakamoto¹, Shouma Hazaka¹, Hiroyasu Ishikawa^1,2 (1.Shibaura Inst., 2.SIT Center for Green Innovation)

9:45 AM - 10:00 AM

[15a-4F-4] Characterization of N-doped DLC Thin Films using Photoelectron Spectroscopy

〇Yuma Murata¹, Ichihara Fumihiko¹, Ono Hiroshi¹, Cheow-keong Choo², Kuwahara Daisuke¹, Katsumi Tanaka¹ (1.Univ. of Electro-Comm., 2.Univ. of Electro-Comm, CIPE)

10:00 AM - 10:15 AM

[15a-4F-5] Relationship between optical constants and sp²/(sp²+sp³) or hydrogen contents of DLC films

〇(D)XiaoLong Zhou¹, Tunmee Sarayut¹, Tsuneo Suzuki¹, Kazuhiro Kanda², Hideki Nakajima³, Keiji Komatsu¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.Hyogo of Univ., 3.SLRI)

10:15 AM - 10:30 AM

[15a-4F-6] Evaluation of structure of DLC films by Bruggeman effective medium approximation

〇Satoru Arakawa¹, XiaoLong Zhou¹, Sarayut Tunmee¹, Hideki Nakajima², Keiji Komatsu¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.SLRI)

10:30 AM - 10:45 AM

△ [15a-4F-7] Soft X-ray dependence of free volume in hydrogenated DLC film with positron annihilation method

〇Shotaro Tanaka¹, Ryo Imai¹, Fuminobu Hori², Kazuhiro Kanda¹ (1.LASTI, Univ. of Hyogo, 2.Osaka Pref. Univ.)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

▲ [15a-4F-8] [Young Scientist Presentation Award Speech] Nano-scale interlayer formation for thermally stable SBD electrical properties

〇Alexandre FIORI¹, Tokuyuki TERAJI¹, Jose PINERO², Daniel ARAUJO², Yasuo KOIDE¹ (1.NIMS, 2.University of Cadiz)

11:15 AM - 11:45 AM

[15a-4F-9] [JSAP Best Review Paper Award Speech] Carrier transport and device applications of new semiconductors - diamonds -

〇Satoshi Yamasaki¹ (1.AIST)

Oral presentation

[15p-4F-1~25] 6.2 Carbon-based thin films

Tue. Sep 15, 2015 1:15 PM - 8:00 PM 4F (438)

座長:小山和博(デンソー),齊藤丈靖(大阪府立大),嘉数誠(佐賀大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

△ [15p-4F-1] Fabrication of diamond surface-channel FET structure using ferroelectric gate insulator

〇RYOTA KARAYA¹, Hiroki Furuichi¹, Ikki Baba¹, Yosuke Mori¹, Takashi Nakajima², Norio Tokuda¹, Takeshi Kawae¹ (1.Kanazawa Univ., 2.Tokyo Univ. of Sci.)

1:30 PM - 1:45 PM

▲ [15p-4F-2] ALD-Al₂O₃/SD-AlN as Bilayer Gate Material for Diamond FET

〇RYAN BANAL¹, Masataka Imura¹, Liu Jiangwei¹, Koide Yasuo¹ (1.NIMS)

1:45 PM - 2:00 PM

△ [15p-4F-3] C-H Diamond MOSFETs with 1.7 kV breakdown voltage and>200 mA/mm current density

〇Takuya Kudo¹, Yuya Kitabayashi¹, Tetsuya Yamada¹, Dechen Xu¹, Toshiki Saito¹, Daisuke Matsumura¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

2:00 PM - 2:15 PM

▲ [15p-4F-4] Hydrogenated Black Diamond FET with high voltage breakdown of 1.8kV

〇(D)M.Syamsul N.S.B.¹, Kitabayashi Yuya¹, Daisuke Matsumura¹, Toshiki Saito¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

2:15 PM - 2:30 PM

▲ [15p-4F-5] ZrO₂ on hydrogenated-diamond: breakdown electric field, interfacial band configuration, and gate-drain distance scaling effect for electrical property of MISFET

〇Jiangwei LIU¹, Meiyong Liao¹, Masataka Imura¹, Yasuo Koide¹ (1.NIMS)

2:30 PM - 2:45 PM

△ [15p-4F-6] The Evaluation of Electrical Characteristics with Black Diamond Solution-Gate FETs

〇(M1)takuro naramura¹, Shaili M.S¹, Inaba Masafumi¹, Mikinori Kobayasi¹, Yukihiro Shintani^1,2, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ., 2.Yokogawa Electric. Corp)

2:45 PM - 3:00 PM

△ [15p-4F-7] Trench-channel vertical MOSFET using C-H diamond surface

〇TOSHIKI SAITO¹, MIKINORI KOBAYASI¹, YUYA KITABAYASHI¹, DAISUKE MATSUMURA¹, MASAFUMI INABA¹, ATSUSHI HIRAIWA¹, HIROSHI KAWARADA¹ (1.Waseda Univ.)

3:00 PM - 3:15 PM

[15p-4F-8] Real –Time Measurement of Hole Doping by NO2 Molecular Adsorption on H-Terminated Diamond Surfaces

〇(P)Kenji Hanada¹, Makoto Kasu¹ (1.Saga Univ.)

3:15 PM - 3:30 PM

[15p-4F-9] Investigation of Valence Band of Boron-doped Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films

〇Yuki Katamune¹, Satoshi Takeichi¹, Tsuyoshi Yoshitake¹, Takeharu Sugiyama¹, Eiji Ikenaga², Ryota Ohtani³, Satoshi Koizumi³ (1.Kyushu Univ., 2.JASRI/SPring-8, 3.NIMS)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[15p-4F-10] Electron Emission from Diamonds at Low Applied Voltages

〇(PC)Yuki Kudo^1,2, Daisuke Takeuchi^1,2, Hiromitsu Kato^1,2, Toshiharu Makino^1,2, Masahiko Ogura^1,2, Hideyo Okushi^1,2, Satoshi Yamasaki^1,2,3 (1.AIST, 2.CREST(JST), 3.Univ. of Tsukuba)

4:00 PM - 4:15 PM

[15p-4F-11] Influence of n-type contact resistance for diamond (001) pin electron emitters

〇(PC)Tsubasa Matsumoto^1,2, Hiroyuki Kawashima^1,2,3, Hiromitsu Kato^1,2, Toshiharu Makino^1,2, Daisuke Takeuchi^1,2, Satoshi Yamasaki^1,2,3 (1.AIST, 2.CREST c/o AIST, 3.Univ. of Tsukuba)

4:15 PM - 4:30 PM

△ [15p-4F-12] Josephson junction for Boron-doped diamond superconducting quantum interference devices

〇Masakuni Hideko¹, Kageura Taisuke¹, Shibata Masanobu¹, Kitabayashi Yuya¹, Yamaguchi Takahide², Takano Yoshihiko², Kawarada Hiroshi¹ (1.Waseda Univ., 2.NIMS)

4:30 PM - 4:45 PM

△ [15p-4F-13] Introduction of stacking faults caused by lattice strain relaxation and observation of magnetic flux pinning in superconducting diamond

〇(M2)Taisuke Kageura¹, Masanobu Shibata¹, Takahide Yamaguchi², Yoshihiko Takano², Hiroshi Kawarada¹ (1.Waseda Univ., 2.NIMS)

4:45 PM - 5:00 PM

△ [15p-4F-14] Fabrication of low-resistivity (1 mΩcm) diamond by hot-filament CVD

〇Shinya Omagari¹, Hideaki Yamada¹, Hitoshi Umezawa¹, Akiyoshi Chayahara¹, Shin-ichi Shikata¹, Yoshiaki Mokuno¹ (1.AIST)

5:00 PM - 5:15 PM

△ [15p-4F-15] Defect Analysis of (110) HPHT type-II Diamond Crystal by Synchrotron X-ray Topograpy

〇Takumi Uematsu¹, Ryuichi Murakami¹, Satoshi Masuya¹, Hitoshi Sumiya², Kenji Hanada¹, Makoto Kasu¹ (1.Saga Univ, 2.Advanced Materials R&D Labs., Sumitomo Electric)

5:15 PM - 5:30 PM

[15p-4F-16] Fabrication of graphene on diamond by high-temperature annealing method using Cu catalysts

〇SHINYA AICHI¹, Kenji Ueda¹, Shingo Hirose¹, Hidehumi Asano¹ (1.Nagoya Univ.)

Break （5:30 PM - 5:45 PM）

5:45 PM - 6:00 PM

△ [15p-4F-17] High-rate heteroepitaxial growth of diamond from process gas with high methane ratio

〇Kokichi Fujita¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Atsuhito Sawabe¹ (1.Aoyama Gakuin Univ., 2.TOPLAS ENGINEERING CO.)

6:00 PM - 6:15 PM

[15p-4F-18] The device fabricated on hetero-diamond film on Si substrate: I-V characteristics of the diamond Schottky barrier diodes

〇(DC)Hiroyuki Kawashima^1,2,3, Noguchi Hitoshi⁴, Ogura Masahiko^2,3, Matsumoto Tsubasa^2,3, Kato Hiromitsu^2,3, Makino Toshiharu^2,3, Shirai Shozo⁴, Takeuchi Daisuke^2,3, Yamasaki Satoshi^1,2,3 (1.Univ. of Tsukuba, 2.AIST, 3.JST/CREST, 4.Shin-Etsu Chemical Corp.)

6:15 PM - 6:30 PM

△ [15p-4F-19] Temperature dependence of exciton emission in diamond

〇(DC)Daisuke Kuwabara^1,2,3, Toshiharu Makino^2,3, Hiromitsu Kato^2,3, Daisuke Takeuchi^2,3, Masahiko Ogura^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^1,2,3 (1.Tsukuba Univ., 2.AIST, 3.CREST/JST)

6:30 PM - 6:45 PM

[15p-4F-20] Quantification of the alignment ratio of ensemble NV center in (111) diamond

〇Kosuke Tahara¹, Hayato Ozawa¹, Takayuki Iwasaki¹, Mutsuko Hatano¹ (1.Tokyo Tech)

6:45 PM - 7:00 PM

[15p-4F-21] Position and Orientation Control of Nitrogen-Vacancy Centers in Diamond using Chemical Vapor Deposition on a Micropatterned (001) Substrate

〇RYUUSHIROU FUJITA¹, RYO KUROKI¹, HIDEYUKI WATANABE², KOUICHI AKAHANE³, M. KOHEI ITOH¹, JUNKO ISHI-HAYASE¹ (1.Keio Univ., 2.AIST, 3.NICT)

7:00 PM - 7:15 PM

[15p-4F-22] Fabrication of nitrogen-vacancy center array using a nanohole resist mask

〇(M1)Itaru HIGASHIMATA¹, Godai KOIKE¹, Tokuyuki TERAJI², Shinobu Onoda³, Masafumi Inaba¹, Priyadharshini Balasubramanian⁴, Boris Naydenov⁴, Fedor Jelezko⁴, Takeshi Ohshima³, Takahiro Shinada⁵, Hiroshi Kawarada¹, Junichi Isoya⁶, Takashi Tanii¹ (1.Waseda Univ., 2.NIMS, 3.JAEA, 4.ULM Univ., 5.Tohoku Univ., 6.Tsukuba Univ.)

7:15 PM - 7:30 PM

[15p-4F-23] Optimal Condition of NV Center Using Heavy Ion Irradiation

〇(M2)moriyoshi haruyama^1,2, shinobu onoda², tokuyuki teraji³, junichi isoya⁴, wataru kada¹, takeshi ohshima², osamu hanaizumi¹ (1.Gunma Univ., 2.JAEA, 3.NIMS, 4.Univ. of Tsukuba)

7:30 PM - 7:45 PM

[15p-4F-24] Germanium-Vacancy Single Color Centers in Diamond

〇Takayuki Iwasaki^1,2, Fumitaka Ishibashi³, Yoshiyuki Miyamoto^2,4, Yuki Doi³, Satoshi Kobayashi³, Takehide Miyazaki^2,4, Kosuke Tahara¹, Kay Jahnke⁵, Lachlan Rogers⁵, Boris Naydenov⁵, Fedor Jelezko⁵, Satoshi Yamasaki^2,4, Shinji Nagamachi^6,7, Toshiro Inubushi⁷, Norikazu Mizuochi^2,3, Mutsuko Hatano^1,2 (1.Tokyo Tech, 2.CREST, 3.Osaka Univ., 4.AIST, 5.Ulm Univ, 6.Nagamachi Sci Lab, 7.Shiga Univ. of Med Sci)

7:45 PM - 8:00 PM

[15p-4F-25] First principle calculation of spin states for exploring single defects in diamond

〇Aiko Kunisaki¹, Manoharan Muruganathan², Hiroshi Mizuta^2,3, Shunri Oda¹, Takayuki Iwasaki¹, Mutsuko Hatano¹, Tetsuo Kodera¹ (1.Tokyo Tech., 2.JAIST, 3.University of Southampton)

Sessions

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[14a-4F-1~11] 6.2 Carbon-based thin films

△ [14a-4F-1] Deposition of DLC Thin Film on Sacrificial Rock Sugar and its Self-Standing

△ [14a-4F-2] Release-in-Water of Thin Films Deposited on Water-Soluble Sacrificial Layer

△ [14a-4F-4] Around-100℃ Deposition Temperature Dependence of DLC Films Prepared by Filtered Arc Deposition

△ [14a-4F-5] Fluorinated Diamond-Like Carbon Films Prepared by Filtered Arc Deposition

△ [14a-4F-6] Effect of soft X-ray on the surface of fluorinated DLC films

▲ [14a-4F-8] Feasibility Study on Corrosion of Diamond-Like Carbon Films by Soft X-ray Photoelectron Emission Microscopy

△ [14a-4F-10] Control of released quantity from Zn doped DLC

[14p-PA9-1~14] 6.2 Carbon-based thin films

△ [14p-PA9-1] EBIC evaluation of electric field enhancement on diamond SBD

△ [14p-PA9-2] Fabrication of polycrystalline diamond FET structure with VDF/TrFE gate

△ [14p-PA9-8] Properties of Graphitic Carbon Nitride Films Prepared by Evaporation with Various Temperatures

△ [14p-PA9-12] Fabrication of DLC Films with Different Characteristic Layers by Filtered Arc Deposition

△ [14p-PA9-13] Estimation of DLC film deposition using RGB measurement of plasma emission

[15a-4F-1~9] 6.2 Carbon-based thin films

△ [15a-4F-7] Soft X-ray dependence of free volume in hydrogenated DLC film with positron annihilation method

▲ [15a-4F-8] [Young Scientist Presentation Award Speech] Nano-scale interlayer formation for thermally stable SBD electrical properties

[15p-4F-1~25] 6.2 Carbon-based thin films

△ [15p-4F-1] Fabrication of diamond surface-channel FET structure using ferroelectric gate insulator

▲ [15p-4F-2] ALD-Al2O3/SD-AlN as Bilayer Gate Material for Diamond FET

△ [15p-4F-3] C-H Diamond MOSFETs with 1.7 kV breakdown voltage and>200 mA/mm current density

▲ [15p-4F-4] Hydrogenated Black Diamond FET with high voltage breakdown of 1.8kV

▲ [15p-4F-5] ZrO2 on hydrogenated-diamond: breakdown electric field, interfacial band configuration, and gate-drain distance scaling effect for electrical property of MISFET

△ [15p-4F-6] The Evaluation of Electrical Characteristics with Black Diamond Solution-Gate FETs

△ [15p-4F-7] Trench-channel vertical MOSFET using C-H diamond surface

△ [15p-4F-12] Josephson junction for Boron-doped diamond superconducting quantum interference devices

△ [15p-4F-13] Introduction of stacking faults caused by lattice strain relaxation and observation of magnetic flux pinning in superconducting diamond

△ [15p-4F-14] Fabrication of low-resistivity (1 mΩcm) diamond by hot-filament CVD

△ [15p-4F-15] Defect Analysis of (110) HPHT type-II Diamond Crystal by Synchrotron X-ray Topograpy

△ [15p-4F-17] High-rate heteroepitaxial growth of diamond from process gas with high methane ratio

△ [15p-4F-19] Temperature dependence of exciton emission in diamond

Authentication

▲ [15p-4F-2] ALD-Al₂O₃/SD-AlN as Bilayer Gate Material for Diamond FET

▲ [15p-4F-5] ZrO₂ on hydrogenated-diamond: breakdown electric field, interfacial band configuration, and gate-drain distance scaling effect for electrical property of MISFET