The device fabricated on hetero-diamond film on Si substrate: I-V characteristics of the diamond Schottky barrier diodes

Hiroyuki Kawashima

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[15p-4F-1~25] 6.2 Carbon-based thin films

Tue. Sep 15, 2015 1:15 PM - 8:00 PM 4F (438)

座長:小山和博(デンソー),齊藤丈靖(大阪府立大),嘉数誠(佐賀大)

6:00 PM - 6:15 PM

[15p-4F-18] The device fabricated on hetero-diamond film on Si substrate: I-V characteristics of the diamond Schottky barrier diodes

〇(DC)Hiroyuki Kawashima^1,2,3, Noguchi Hitoshi⁴, Ogura Masahiko^2,3, Matsumoto Tsubasa^2,3, Kato Hiromitsu^2,3, Makino Toshiharu^2,3, Shirai Shozo⁴, Takeuchi Daisuke^2,3, Yamasaki Satoshi^1,2,3 (1.Univ. of Tsukuba, 2.AIST, 3.JST/CREST, 4.Shin-Etsu Chemical Corp.)

Keywords:hetero-diamond,Schottky barrier diode,I-V characteristics