[15p-PB2-1~53] 8 Plasma Electronics（Poster)

△ [15p-PB2-35] Investigation the cause of plasma treatment for low temperature annealed dye-sensitized solar cells

〇(DC)Shungo Zen¹, Ryo Ono¹ (1.The Univ. of Tokyo)

Keywords:Dye-sensitized solar cells,low temperature annealing,surface treatment

Dye-sensitized solar cells (DSSCs) require annealing of TiO₂ photoelectrodes at 450 C to 550 C. However, such high-temperature annealing is unfavorable because it limits the use of materials that cannot withstand high temperatures, such as plastic substrates. In our previous paper, a low temperature annealing technique of TiO₂ photoelectrodes using ultraviolet light and dielectric barrier discharge treatments was proposed to reduce the annealing temperature from 450 C to 150 C for a TiO₂ paste containing an organic binder. Here, we investigated the cause of plasma treatment via the Nyquist diagram of DSSCs. The Nyquist diagram was masured with a frequency response analyzer under 100 mW/cm² illumination of a calibrated xenon lamp. The lifetime of the electrons, the effective electron diffusion coefficient, and the electron diffusion length of TiO₂ photoelectrodes were determined by analyzing the the Nyquist diagrams. As a result of analyzing the Nyquist diagrams, it was shown that plasma treatment can reduce the electron transport resistance and promote the necking of Hot UV annealed TiO₂ nanoparticles.