[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[16a-1A-2] C-related Defect reduced by the Control of Dry Oxidation Process

Tomoya Sasago¹, Hitoshi Arai¹, Koji Kita², Takayuki Muro³, 〇Hiroshi Nohira¹ (1.Tokyo City Univ., 2.The Univ. of Tokyo, 3.Japan Synchrotron Radiation Research Institute)

Keywords:SiC,XPS,C-related defect

We investigated the C-related defect in SiO₂/4H-SiC(0001(_)) using the angle-resolved XPS. Analyses of Si 2p and C 1s photoelectron spectra show that C-related defect in SiO₂ is reduced by the control of dry oxidation process.