The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K

[16a-1B-1~12] 21.1 Joint Session K

Wed. Sep 16, 2015 9:00 AM - 12:15 PM 1B (133+134)

座長:川原村 敏幸(高知工科大)

9:00 AM - 9:15 AM

[16a-1B-1] Change of surface properties of Ga-doped ZnO thin films by thermal annealing

〇Hisao Makino1,2, Lukman Nulhakim2, Nomoto Jun-ichi1, Yamamoto Tetsuya1 (1.Res. Inst. of KUT, 2.Kochi Univ. of Tech.)

Keywords:ZnO,oxide,surface

The surfacfeproperties of Ga-doped ZnO thin films were characterized by x-ray photoemission spectroscopy.It was found that the surface properties were changed depending on the growth condition.