[16a-1C-1~11] 13.5 Semiconductor devices and related technologies

△ [16a-1C-10] 1.5-μm-band Infrared Photo-detection of InGaAs Microdisks on Si by Selective-area MOVPE

〇Toma Watanabe¹, Yoshiaki Nakano¹, Masakazu Sugiyama¹ (1.Univ. Tokyo)

Keywords:Micro-channel Selective Area Growth,III-V on Si

Tens thousands of p-i-n InGaAs microdisks, which are grown by metal organic vapor phase epitaxy, are fabricated to photodetector. Though this test device has a large leak current and response around 1000nm due to Si substrate, 0.2 A/W photoresponse at 1280nm was observed under reverse bias -0.3 V. This result shows the potential of InGaAs maicrodisks on Si for a large area and inexpensive photodetectors.