[16a-1C-1~11] 13.5 Semiconductor devices and related technologies

[16a-1C-2] Introduction of SiGe/Si Hetero-Tunnel-Junction into Multilayer Tunnel FinFETs

〇Yukinori Morita¹, Koichi Fukuda¹, Takahiro Mori¹, Wataru Mizubayashi¹, Shinji Migita¹, Kazuhiko Endo¹, Shin-ichi O'uchi¹, Yongxun Liu¹, Meishoku Masahara¹, Takashi Matsukawa¹, Hiroyuki Ota¹ (1.AIST)

Keywords:tunnel FET,SiGe,FinFET

Tunnel FinFETs equipped with SiGe/Si heterojunction and multilayer fin-channel has been experimentally demonstrated. High quality SiGe layer is epitaxially grown on heavily doped Si source. SiGe/Si hetero-multilayer fin-channel with trigate configuration significantly enhances the drain current comparing with the conventional SiGe/Si heterojunction parallel-plate TFET.