[16a-2D-1~4] 13.6 Semiconductor English Session

▲ [16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

Krzysztof Tyszka^1,2, 〇Daniel Moraru³, Arup Samanta¹, Takeshi Mizuno¹, Ryszard Jablonski², Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.Warsaw Univ. Tech., 3.Shizuoka Univ.)

キーワード：dopant-atom,silicon nano-FET,KPFM

In dopant-atom transistors, low-temperature I-V characteristics reveal single-electron tunneling (SET) via QDs induced by individual or clustered dopant-atoms. However, so far, there has been no direct correlation between I-V characteristics and dopant-induced potential landscapes. Here, we clarify this correlation between SET transport and potential maps measured by Kelvin probe force microscopy (KPFM).