The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.6 Semiconductor English Session

[16a-2D-1~4] 13.6 Semiconductor English Session

Wed. Sep 16, 2015 9:00 AM - 10:00 AM 2D (212-2)

Chair:Tomo Ueno(TUAT)

9:15 AM - 9:30 AM

[16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

Krzysztof Tyszka1,2, 〇Daniel Moraru3, Arup Samanta1, Takeshi Mizuno1, Ryszard Jablonski2, Michiharu Tabe1 (1.RIE, Shizuoka Univ., 2.Warsaw Univ. Tech., 3.Shizuoka Univ.)

Keywords:dopant-atom,silicon nano-FET,KPFM

In dopant-atom transistors, low-temperature I-V characteristics reveal single-electron tunneling (SET) via QDs induced by individual or clustered dopant-atoms. However, so far, there has been no direct correlation between I-V characteristics and dopant-induced potential landscapes. Here, we clarify this correlation between SET transport and potential maps measured by Kelvin probe force microscopy (KPFM).