[16a-2D-1~4] 13.6 Semiconductor English Session

▲ [16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique

〇(P)WENHSIN CHANG¹, HIROYUKI OTA¹, TATSURO MAEDA¹ (1.AIST)

キーワード：Ge,S/D engineering

The parasitic resistance (R_para) of Ge p-channel metal–oxide–semiconductor field-effect transistors (p-MOSFETs) fabricated by ion implantation after germanidation (IAG) has been investigated by varying the drive-in annealing temperature. With increasing drive-in annealing temperature, the R_para was reduced obiviously, and low R_para of 835 Ω-μm was achieved after 450 °C drive-in annealing for 1 min. IAG, a pathway for introducing a Ge channel into CMOS technology beyond the 10nm node, was proved to be effective for reducing R_para.