The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.6 Semiconductor English Session

[16a-2D-1~4] 13.6 Semiconductor English Session

Wed. Sep 16, 2015 9:00 AM - 10:00 AM 2D (212-2)

Chair:Tomo Ueno(TUAT)

9:00 AM - 9:15 AM

[16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique


Keywords:Ge,S/D engineering

The parasitic resistance (Rpara) of Ge p-channel metal–oxide–semiconductor field-effect transistors (p-MOSFETs) fabricated by ion implantation after germanidation (IAG) has been investigated by varying the drive-in annealing temperature. With increasing drive-in annealing temperature, the Rpara was reduced obiviously, and low Rpara of 835 Ω-μm was achieved after 450 °C drive-in annealing for 1 min. IAG, a pathway for introducing a Ge channel into CMOS technology beyond the 10nm node, was proved to be effective for reducing Rpara.