The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16a-2D-5~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 16, 2015 10:15 AM - 12:15 PM 2D (212-2)

座長:上野 智雄(農工大)

10:45 AM - 11:00 AM

[16a-2D-7] Evaluation of Cobalt Silicide formation process by Raman spectroscopy

〇(M1)Kazuya Yamamura1, Hiroshi Nishigaki1, Noriyuki Hasuike1, Hiroshi Harima1, Woo Sik Yoo2 (1.Kyoto Inst. Tech., 2.Wafer Masters Inc.)

Keywords:Cobalt silicide,Raman spectroscopy