Poster presentation

[15p-PA4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Tue. Sep 15, 2015 4:00 PM - 6:00 PM PA4 (Event Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[15p-PA4-1] Investigation of Si-based Peltier devices for cooling power semiconductors

〇Yutaka Furubayashi¹, Takafumi Tanehira², Kei Yonemori², Norihide Seo², Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Univ., 2.Mazda Motor Corp.)

4:00 PM - 6:00 PM

[15p-PA4-2] Statistical Analysis of the Current Variability in Si Nanowire Transistor Induced by Increasing Doping Ion Density

〇YUKI OGAWA¹, Yoshinari Kamakura², Takanobu Watanabe¹ (1.Waseda Univ., 2.Osaka Univ.)

4:00 PM - 6:00 PM

[15p-PA4-3] Simulation of Self-bias Channel Diode having Super Junction structure

〇(M1)Hirotaka Tsushima¹, Tsugutomo Kudoh², Fumihiko Sugawara¹ (1.Tohoku Gakuin Univ., 2.Kanagawa Inst. of Tech.)

4:00 PM - 6:00 PM

[15p-PA4-4] A first principles study on the processes of silicon carbide thermal oxidation

Takahiro Yamasaki^1,2, 〇Nobuo Tajima^1,2,4, Tomoaki Kaneko^1,2, Jun Nara^1,2, Tatsuo Schimizu³, Kouichi Kato³, Takahisa Ohno^1,2,4 (1.NIMS, 2.MARCEED, 3.Toshiba R&D Center, 4.Univ. of Tokyo)

4:00 PM - 6:00 PM

▲ [15p-PA4-5] Nano holes on micro pyramids: modulated surface texturing with neutral beam for the application of optical trapping in Si Solar cells

〇(PC)Halubai Sekhar¹, Yasuhiro Kida¹, Mohammad Maksudur Rahman², Tomohiro Kubota², Seiji Samukawa^2,3, Hidetaka Takato¹, Michio Kondo¹ (1.Fukushima Renewable Energy Institute, AIST, Japan, 2.Institute of Fluid Science, Tohoku University, Sendai, Japan, 3.WPI Advanced Institute for Materials Research, Tohoku University, Sendai, Japan)

Oral presentation

[16a-2D-5~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 16, 2015 10:15 AM - 12:15 PM 2D (212-2)

座長:上野智雄(農工大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:15 AM - 10:30 AM

[16a-2D-5] Temperature Dependence of Photoluminescence Properties of
Si Quantum Dots with Ge Core

〇Keigo Kondou¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

10:30 AM - 10:45 AM

[16a-2D-6] Characterization of Electron Field Emission from Multiply-Stacking Phosphorus Doped Si Quantum Dots

〇Daichi Takeuchi^1,2, Katsunori Makihara¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.JSPS Reseatch Fellow)

10:45 AM - 11:00 AM

[16a-2D-7] Evaluation of Cobalt Silicide formation process by Raman spectroscopy

〇(M1)Kazuya Yamamura¹, Hiroshi Nishigaki¹, Noriyuki Hasuike¹, Hiroshi Harima¹, Woo Sik Yoo² (1.Kyoto Inst. Tech., 2.Wafer Masters Inc.)

11:00 AM - 11:15 AM

[16a-2D-8] Research on charge-up compensation in x-ray photoelectron spectroscopy

〇YUUTA TSUBUKI^1,2, Daisuke Kobayashi^1,2, Kazuyuki Hirose^1,2 (1.Univ. Tokyo, 2.ISAS/JAXA)

11:15 AM - 11:30 AM

[16a-2D-9] Determination of Si and SiO₂ Valence Band Edge using by XPS

〇Nobuyuki Fujimura¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

11:30 AM - 11:45 AM

[16a-2D-10] High-spatial-resolution Measurement of Stress Relaxation Profile in Strained SiGe Nanowires on Ge Substrate by EBSP

〇Motohiro Tomita^1,2, Kazuma Takeuchi¹, Shotaro Yamamoto¹, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Res. Fellow PD, 3.GNC, AIST)

11:45 AM - 12:00 PM

[16a-2D-11] Charge Collection in Semiconductor Devices Irradiated by Pulsed-laser using
Two-Photon Absorption Process.

〇HIROAKI ITSUJI^1,2, Daisuke Kobayashi^1,2, Kazuyuki Hirose^1,2 (1.Univ. Tokyo, 2.ISAS/JAXA)

12:00 PM - 12:15 PM

[16a-2D-12] Structures and electronic properties of group IV semiconductor alloy monolayers

〇Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

Oral presentation

[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 16, 2015 1:15 PM - 5:00 PM 2D (212-2)

座長:嵯峨幸一郎(ソニー),森伸也(阪大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[16p-2D-1] Development of Scanning Spreading Resistance Microscopy (SSRM) to Failure Analysis

〇YOHEI HAYASE¹, KEIRYO HARA¹, SHINSUKE OGATA¹, LI ZHANG², HARUKO AKUTSU¹ (1.S&S Co. Toshiba Corp., 2.R&D Center Toshiba Corp.)

1:30 PM - 1:45 PM

[16p-2D-2] Effect of sample surface protection layer on SSRM measurements

〇Jun Yoshigiwa¹, Masanaga Fukasawa¹, Takuya Ito¹, Keiji Ohshima¹, Koichiro Saga¹ (1.Sony Corp.)

1:45 PM - 2:00 PM

[16p-2D-3] Organic Molecules Interaction Evaluated Using Quartz Crystal Microbalance

Jaeha Choi¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

2:00 PM - 2:15 PM

[16p-2D-4] Water Exhaust Design for Batch-type Silicon Wafer Wet Cleaner

Nobutaka Ono¹, 〇shogo okuyama¹, Kento Miyazaki¹, Hitoshi Habuka¹, Akihiro Goto² (1.Yokohama Nat. Univ., 2.Pre-Tech)

2:15 PM - 2:30 PM

[16p-2D-5] Flattening of Ge Surfaces by Catalytic Metals to Enhance O₂ Reduction Reactions in Water

〇Kenta Arima¹, Tatsuya Kawase¹, Yusuke Saito¹, Kentaro Kawai¹, Yasuhisa Sano¹, Kazuto Yamauchi¹, Mizuho Morita¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

△ [16p-2D-6] Annealing condition dependence of Si surface flattening process

〇(D)Sohya Kudoh¹, Nithi Atthi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Break （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[16p-2D-7] Electronic structure calculation of Si polymorphs by TE-TB method

〇Shinya Nishino¹, Takeo Fujiwara², Susumu Yamamoto³, Takashi Suzuki¹, Minoru Ikeda⁴, Yasuaki Ohtani¹ (1.ARGO GRAPHICS Inc., 2.The University of Tokyo, 3.Tokyo University of Technology,, 4.NIMS)

3:15 PM - 3:30 PM

△ [16p-2D-8] Molecular Dynamics Study on Interatomic Potential in SiGe with Using Molecular Orbital Method

〇Motohiro Tomita^1,2,3, Ogura Atsushi², Takanobu Watanabe¹ (1.Waseda Univ., 2.Meiji Univ., 3.JSPS Res. Fellow PD)

3:30 PM - 3:45 PM

△ [16p-2D-9] Development of Dynamic-Bond-Order Potential for SiC/SiO₂ Interface Modeling

〇(D)Shuichiro Hashimoto¹, Takanobu Watanabe¹ (1.Waseda Univ.)

3:45 PM - 4:00 PM

△ [16p-2D-10] Molecular Dynamics Study of Thermal Conductivity and Phonon Dispersion in Ge Nanowire Covered with GeO₂ Film

〇ryuta koide¹, kousuke shimura¹, shuichiro hashimoto¹, motohiro tomita^1,2,3, takanobu watanabe¹ (1.Waseda Univ., 2.Meiji Univ., 3.JSPS Research Fellow PD)

4:00 PM - 4:15 PM

[16p-2D-11] Ballistic Thermal Transport by Acoustic Phonons in Corrugated Silicon Nanowires

〇Junichi Hattori¹, Vladimir Poborchii¹, Tetsuya Tada¹ (1.AIST)

4:15 PM - 4:30 PM

△ [16p-2D-12] Appearance of negative differential resistance in high-field hole transport in Ge nanowires

〇Hajime Tanaka¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

4:30 PM - 4:45 PM

[16p-2D-13] Carrier Mobility Evaluated from Various Discrete Dopant Models in Drift-Diffusion Simulations

〇(M2)kazusa inoue¹, Min Chong Lim¹, Akiko Ueda¹, Nobuyuki Sano¹ (1.Tsukuba Univ.)

4:45 PM - 5:00 PM

[16p-2D-14] Examination of Boundary Condition Exchange Method for Domain Division Analysis of Large Scale Semiconductor Devices

〇Kazuya Matsuzawa¹, Masatoshi Abe¹, Yoshinori Oda¹, Jun Komachi¹, Hiroyuki Ito¹, Shohiro Sho², Shinji Odanaka², Hiroo Koshimoto³, Tsutomu Ikegami³, Koichi Fukuda³ (1.STARC, 2.Osaka Univ., 3.AIST)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-PA4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-PA4-1] Investigation of Si-based Peltier devices for cooling power semiconductors

[15p-PA4-2] Statistical Analysis of the Current Variability in Si Nanowire Transistor Induced by Increasing Doping Ion Density

[15p-PA4-3] Simulation of Self-bias Channel Diode having Super Junction structure

[15p-PA4-4] A first principles study on the processes of silicon carbide thermal oxidation

▲ [15p-PA4-5] Nano holes on micro pyramids: modulated surface texturing with neutral beam for the application of optical trapping in Si Solar cells

[16a-2D-5~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16a-2D-5] Temperature Dependence of Photoluminescence Properties of
Si Quantum Dots with Ge Core

[16a-2D-6] Characterization of Electron Field Emission from Multiply-Stacking Phosphorus Doped Si Quantum Dots

[16a-2D-7] Evaluation of Cobalt Silicide formation process by Raman spectroscopy

[16a-2D-8] Research on charge-up compensation in x-ray photoelectron spectroscopy

[16a-2D-9] Determination of Si and SiO₂ Valence Band Edge using by XPS

[16a-2D-10] High-spatial-resolution Measurement of Stress Relaxation Profile in Strained SiGe Nanowires on Ge Substrate by EBSP

[16a-2D-11] Charge Collection in Semiconductor Devices Irradiated by Pulsed-laser using
Two-Photon Absorption Process.

[16a-2D-12] Structures and electronic properties of group IV semiconductor alloy monolayers

[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-2D-1] Development of Scanning Spreading Resistance Microscopy (SSRM) to Failure Analysis

[16p-2D-2] Effect of sample surface protection layer on SSRM measurements

[16p-2D-3] Organic Molecules Interaction Evaluated Using Quartz Crystal Microbalance

[16p-2D-4] Water Exhaust Design for Batch-type Silicon Wafer Wet Cleaner

[16p-2D-5] Flattening of Ge Surfaces by Catalytic Metals to Enhance O₂ Reduction Reactions in Water

△ [16p-2D-6] Annealing condition dependence of Si surface flattening process

[16p-2D-7] Electronic structure calculation of Si polymorphs by TE-TB method

△ [16p-2D-8] Molecular Dynamics Study on Interatomic Potential in SiGe with Using Molecular Orbital Method

△ [16p-2D-9] Development of Dynamic-Bond-Order Potential for SiC/SiO₂ Interface Modeling

△ [16p-2D-10] Molecular Dynamics Study of Thermal Conductivity and Phonon Dispersion in Ge Nanowire Covered with GeO₂ Film

[16p-2D-11] Ballistic Thermal Transport by Acoustic Phonons in Corrugated Silicon Nanowires

△ [16p-2D-12] Appearance of negative differential resistance in high-field hole transport in Ge nanowires

[16p-2D-13] Carrier Mobility Evaluated from Various Discrete Dopant Models in Drift-Diffusion Simulations

[16p-2D-14] Examination of Boundary Condition Exchange Method for Domain Division Analysis of Large Scale Semiconductor Devices

Authentication

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-PA4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

▲ [15p-PA4-5] Nano holes on micro pyramids: modulated surface texturing with neutral beam for the application of optical trapping in Si Solar cells

[16a-2D-5~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [16p-2D-6] Annealing condition dependence of Si surface flattening process

△ [16p-2D-8] Molecular Dynamics Study on Interatomic Potential in SiGe with Using Molecular Orbital Method

△ [16p-2D-9] Development of Dynamic-Bond-Order Potential for SiC/SiO2 Interface Modeling

△ [16p-2D-10] Molecular Dynamics Study of Thermal Conductivity and Phonon Dispersion in Ge Nanowire Covered with GeO2 Film

△ [16p-2D-12] Appearance of negative differential resistance in high-field hole transport in Ge nanowires

Authentication

△ [16p-2D-9] Development of Dynamic-Bond-Order Potential for SiC/SiO₂ Interface Modeling

△ [16p-2D-10] Molecular Dynamics Study of Thermal Conductivity and Phonon Dispersion in Ge Nanowire Covered with GeO₂ Film