The 76th JSAP Autumn Meeting, 2015

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Poster presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-PA4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Tue. Sep 15, 2015 4:00 PM - 6:00 PM PA4 (Event Hall)

4:00 PM - 6:00 PM

[15p-PA4-2] Statistical Analysis of the Current Variability in Si Nanowire Transistor Induced by Increasing Doping Ion Density

〇YUKI OGAWA1, Yoshinari Kamakura2, Takanobu Watanabe1 (1.Waseda Univ., 2.Osaka Univ.)

Keywords:FET,nanowire,device simulation