The 76th JSAP Autumn Meeting, 2015

Presentation information

Print

Poster presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[15p-PA4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Tue. Sep 15, 2015 4:00 PM - 6:00 PM PA4 (Event Hall)

4:00 PM - 6:00 PM

[15p-PA4-3] Simulation of Self-bias Channel Diode having Super Junction structure

〇(M1)Hirotaka Tsushima1, Tsugutomo Kudoh2, Fumihiko Sugawara1 (1.Tohoku Gakuin Univ., 2.Kanagawa Inst. of Tech.)

Keywords:Power Semiconductor Device,Self-bias Channel Diode,Super Junction

The authors have proposed a low on-state voltage of the self-bias channel diode (later SBCD) with a DMOS cell structure obtained by introducing a self-bias effect to the channel diode of 3-terminal operation. This device is a trade-off related to the on-voltage and the breakdown voltage. In this paper, employing a super junction structure on the SBCD, without adversely affecting the turn-on voltage, and report the confirmed that high breakdown voltage is possible.