[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-2D-1] Development of Scanning Spreading Resistance Microscopy (SSRM) to Failure Analysis

〇YOHEI HAYASE¹, KEIRYO HARA¹, SHINSUKE OGATA¹, LI ZHANG², HARUKO AKUTSU¹ (1.S&S Co. Toshiba Corp., 2.R&D Center Toshiba Corp.)

Keywords:SSRM,P-N junction,Failure analysis

Much attention has been paid to Scanning Spread Resistance Microscopy (SSRM) for visualizing impurity diffusion layer. We report applications of SSRM to failure analysis. It is possible to clarify PN-junction errore for advanced devices. SSRM can observe defect implantation area detected by defect localization techniques with high spatial resolution.