[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [16p-2D-12] Appearance of negative differential resistance in high-field hole transport in Ge nanowires

〇Hajime Tanaka¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:germanium,nanowire,high-field

We analyzed the high-field hole transport properties in Ge nanowires by solving Boltzmann transport equation based on atomistic models. We found that some nanowires show negative differential resistance. This originates from the enhanced occupation of holes in heavy-effective-mass subbands at high-field.