The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 16, 2015 1:15 PM - 5:00 PM 2D (212-2)

座長:嵯峨 幸一郎(ソニー),森 伸也(阪大)

2:15 PM - 2:30 PM

[16p-2D-5] Flattening of Ge Surfaces by Catalytic Metals to Enhance O2 Reduction Reactions in Water

〇Kenta Arima1, Tatsuya Kawase1, Yusuke Saito1, Kentaro Kawai1, Yasuhisa Sano1, Kazuto Yamauchi1, Mizuho Morita1 (1.Osaka Univ.)

Keywords:germanium surface,oxygen reduction reaction,water

We demonstrated surface flattening of Ge by metal-assisted chemical etching mediated by dissolved-oxygen molecules in water. Namely, we formed a Pt thin film on a soft elastomer pad, which was in contact with a Ge wafer in O2-saturated water. After both the catalyst plate and the Ge wafer were rotated in the same plane, we have found that the surface microroughness of Ge was improved. It is probably owing to the preferential contact of surface protrusions of Ge with a Pt surface. This was followed by the oxidation of these protrusions by the catalytic activity of Pt to enhance the O2 reduction reaction in water. Because the surface protrusions composed of GeO2 were dissolved, the flattened Ge surface was obtained.