2:30 PM - 2:45 PM
△ [16p-2D-6] Annealing condition dependence of Si surface flattening process
Keywords:surface flattening process,Silicon,devise characteristics
Presentation information
Oral presentation
13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials
[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials
Wed. Sep 16, 2015 1:15 PM - 5:00 PM 2D (212-2)
座長:嵯峨 幸一郎(ソニー),森 伸也(阪大)