3:30 PM - 3:45 PM
△ [16p-2D-9] Development of Dynamic-Bond-Order Potential for SiC/SiO2 Interface Modeling
Keywords:SiC,insulator,molecular dynamics simulation
Presentation information
Oral presentation
13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials
[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials
Wed. Sep 16, 2015 1:15 PM - 5:00 PM 2D (212-2)
座長:嵯峨 幸一郎(ソニー),森 伸也(阪大)