The 76th JSAP Autumn Meeting, 2015

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3 Optics and Photonics » 3.13 Semiconductor optical devices

[16a-2E-1~9] 3.13 Semiconductor optical devices

Wed. Sep 16, 2015 10:00 AM - 12:15 PM 2E (221-1)

座長:尾崎 信彦(和歌山大)

12:00 PM - 12:15 PM

▲ [16a-2E-9] First Demonstration of 850 nm Transverse Coupled Cavity Vertical Cavity Surface-Emitting Laser

〇(PC)XIAODONG GU1, MASANORI NAKAHAMA1, AKIHIRO MATSUTANI2, FUMIO KOYAMA1 (1.P&I Lab. Tokyo Tech., 2.Tech. Depart. Tokyo Tech.)

Keywords:VCSEL

We for the first time demonstrated an 850 nm-band transverse coupled cavity vertical cavity surface-emitting laser, which shows a record-breaking modulation bandwidth of over 30GHz.