[16a-2Q-1~9] 8.5 nanotechnology.

[16a-2Q-4] Influences of Pulse Discharge on Formation of SiO:CH Particles by CCP-CVD

〇Yasushi Inoue^1,2, Haruka Koike², Shotaro Kakizawa¹, Hiroyuki Tanaka¹, Osamu Takai³ (1.Chiba Inst. Technol., 2.Grad. Chiba Inst. Technol., 3.Kanto Gakuin Univ.)

Keywords:SiO:CH,particles,pulsed PECVD

We investigated the formation of SiO:CH particles polymerized in plasma during a pulsed RF-PECVD process with organosilicon reactants. It was found that the polymerization occurs when the duty ratio is higher than a specific value, and that there is an inverse correlation between the surface density and the average size of the deposited particles.