[16a-2R-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-2R-1] Preparation of Fe₃Si/FeSi₂/FeSi₃ Spin Valve Films

Kazuya Ishibashi¹, Yuki Asai¹, Kazutoshi Nakashima¹, Ken-ichiro Sakai², 〇Tsuyoshi Yoshitake¹ (1.Kyushu Univ., 2.Kurume NCT)

Keywords:spin valve,iron silicides,sputtering

Heterostructures comprising semiconducting FeSi₂ and ferromagnetic Fe₃Si are new candidate applicable to spintronics devices. In this work, Fe₃Si/FeSi₂/Fe₃Si trilayerd spin valve films were prepared by facing targets dirtect-current sputtering and spin current was detected was detected by local and non-local configurations.