The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16a-2R-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 2R (231-2)

座長:末益 崇(筑波大)

11:45 AM - 12:00 PM

[16a-2R-11] Preparation of Ca-Mg-Si Films by Sputtering Method and Their Properties

〇Mutsuo Uehara1, Mao Kurokawa1, Kensuke Akiyama1,2, Masaaki Matsushima1, HIroshi Uchida3, Yoshisato Kimura1, Hiroshi Funakubo1 (1.Tokyo Tech., 2.Kanagawa Industrial Technology Center, 3.Sophia Univ.)

Keywords:Thermoelectric materials,Silicide,Sputtering method